Re: lethal dc voltage UL and similar safety standard require a safety interlock for any potential voltage exposures of 42 volts or higher. This comes from the average resistance of a human being with the current levels sufficient to trigger dangerous effects such as fibrillation.

This is the common voltage of TV panel. Basically this is a drain voltage of MOSFET. When a Mosfet act as their nature this VDD voltage flow through the drain to source. This VDD voltage standard value is 3.3v. Most of the time we get 3.3v on the VDD voltage point. If this voltage is not present in the TV panel we will get White display problem.

Open DRAM Timing Configuration (or it’s equivalent). VDDP voltage - voltage for the transistor that sets memory contents. Limit: up to 1.1 V. CLDO VDDP voltage - voltage for the DDR4 PHY on the SoC. The DDR4 PHY or physical-layer interface converts information from the memory controllers to a format the DDR4 memory modules can understand. The SOC Voltage its set to 1.15v and VDDG at 1.11v since I read they have to be at 40mv away ideally.

Max vddg voltage

With an SoC voltage of 1.10v, the CLDO_VDDG voltages will drop depending on the SoC LLC by roughly ~ 40mv to 1.01mv if left on Auto. So adjusting CLDO_VDDG manually you will have to ensure the SoC voltage drop under load is 40mv or less. TechPowerUp states VDDP can be 1.1v but that CLDO VDDP can cause issues and should never be this high https://www.techpowerup.com/review/amd-ryzen-memory-tweaking-overclocking-guide/2.html not sure which it would be here but ill leave HWInfo64 as well What can i take away from this? CLDO VDDG is 1.000.

Max. surge peak forward and reverse blocking voltage V DSM, t p = 10 ms, f = 5 Hz 6500 V V RSM T vj = 5…125°C, Note 1 Max repetitive peak forward and reverse blocking voltage V DRM, f = 50 Hz, t p = 10 ms, t p1 = 250 μs, 6500 V V RRM Tvj = 5…125°C, Note 1, Note 2 Max crest working forward and reverse voltages RRMV DWM, 3300 V RWMV RWM

Absolute max and not recommended: 1.500 to 1550 volts. DRAM boot voltage - voltage at which memory training takes place at system start-up.

If you're on Ryzen 3000, this doesn't matter as 3800MHz is the typical max memory For example, if you set the VDDG to 1.100V, while your actual SoC voltage

V T (ext) = V GS (gm(max)) - I D (gm(max)) /g m(max) where. V GS (gm(max)) is the gate voltage at the point of the maximum slope of the I D-V GS curve; 5–4 Chapter 5: Using MAX V Devices in Multi-Voltage Systems 5.0-V Device Compatibility MAX V Device Handbook June 2017 Altera Corporation Figure 5–3 shows MAX V device compatibility with 5.0-V CMOS devices.

VDDG is sourced from SOC voltage and therefore will not be able to exceed SOC voltage. On ambient 1.0 VDDG CCD + 1.10 VDDG IOD is enough to max out FCLK. On LN2 you want around 0.9 VDDG IOD and 1.20 VDDG CCD. On the chipset, when bclk is overclocked, the SATA would all drop out. For BCLK oc use a pcie raid card or NVME, and this will do vddg 1.105v DRAM voltage (will vary) I just suggest using XMP profile and then dropping the MHZ if issues still occur. I had issues even at 3200mhz on my kit but that was before I started fiddling with other voltages which are probably not ideal for x4 dimm configurations at certain speeds. Either way high voltage kills processors fastest. My 8700K at 5.4ghz I keep under 70c, No HT stricktly 3D benching on about 8-9c water delta on full coper water block.
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is AMD recommendation, unless SoC LN2 Mode is enabled (and the CPU is used in sub-zero temps). 0.950V is the default level and based on my experience, going over 1.000V is excessive as 0.950V should be more than enough for 1800MHz.

V GS (gm(max)) is the gate voltage at the point of the maximum slope of the I D-V GS curve; 5–4 Chapter 5: Using MAX V Devices in Multi-Voltage Systems 5.0-V Device Compatibility MAX V Device Handbook June 2017 Altera Corporation Figure 5–3 shows MAX V device compatibility with 5.0-V CMOS devices.
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DRAM boot voltage - voltage at which memory training takes place at system start-up. Limit: up to 1.45–1.50 V. VDDP voltage - voltage for the transistor that sets memory contents.

The open-drain pin never drives high, only low or tri-state. When the open-drain pin is active, it drives low. Look at "Electrical Characteristics", it gives max VREF as VDDANA-0.6V.